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| device marking shipping ordering information 2N7002DW1T1 702 3000 tape & reel maximum ratings nCchannel sot-363 thermal characteristics characteristic symbol max unit total device dissipation per device fr?5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in rating symbol value unit drain?source voltage v dss 60 vdc drain?gate voltage (r gs = 1.0 m ) v dgr 60 vdc drain current ? continuous t c = 25 c (note 1) ? continuous t c = 100 c (note 1) ? pulsed (note 2) i d i d i dm 115 75 800 madc gate?source voltage ? continuous ? non?repetitive (t p 50 s) v gs v gsm 20 40 vdc vpk small signal mosfet 115 mamps,60 volts s 1 d 1 d 2 s 2 g 1 g 2 123 4 5 6 ? we declare that the material of product are halogen free and compliance with rohs requirements. esd protected:1000v ? ? ? 2012-0 willas electronic corp. 2n7002dw1 t1
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCsource breakdown voltage (v gs = 0, i d = 10 adc) v (br)dss 60 C C vdc zero gate voltage drain current t j = 25 c (v gs = 0, v ds = 60 vdc) t j = 125 c i dss C C C C 1.0 500 adc gateCbody leakage current, forward (v gs = 20 vdc) i gssf C C gateCbody leakage current, reverse (v gs = C 20 vdc) i gssr C C on characteristics (note 2.) gate threshold voltage (v ds = v gs ,i d = 250 adc) v gs(th) 1.0 C 2.0 vdc onCstate drain current (v ds 2.0 v ds(on) ,v gs = 10 vdc) i d(on) 500 C C ma static drainCsource onCstate voltage (v gs = 10 vdc, i d = 500 madc) (v gs = 5.0 vdc, i d = 50 madc) v ds(on) C C C C 3.75 0.375 vdc static drainCsource onCstate resistance (v gs = 10 v, i d = 500 madc) t c = 25 c t c = 125 c (v gs = 5.0 vdc, i d = 50 madc) t c = 25 c t c = 125 c r ds(on) C C C C C C C C 7.5 13.5 7.5 13.5 ohms forward transconductance (v ds 2.0 v ds(on) ,i d = 200 madc) g fs 80 C C mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c iss C C 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c oss C C 25 pf reverse transfer capacitance (v ds = 25 vdc, v gs = 0, f = 1.0 mhz) c rss C C 5.0 pf switching characteristics (note 2.) turnCon delay time (v dd = 25 vdc , i d 500 madc, t d(on) C C 20 ns turnCoff delay time (v r g = 25 ? , r l = 50 ? ,v gen = 10 v) t d(off) C C 40 ns bodyCdrain diode ratings diode forward onCvoltage (i s = 11.5 madc, v gs = 0 v) v sd C C C1.5 vdc source current continuous (body diode) i s C C C115 madc source current pulsed i sm C C C800 madc 2. pulse test: pulse width 300 s, duty cycle 2.0%. 1 adc -1 adc 2012-0 willas electronic corp. small signal mosfet 115 mamps,60 volts 2n7002dw1 t1 typical electrical characteristics ! " " #$% &$' &$( &$) &$# &$% %$' %$( %$) %$# % &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 1. ohmic region &$% %$' %$( %$) %$# &% % &$% #$% *$% )$% +$% ($% ,$% '$% -$% figure 2. transfer characteristics #$) #$# #$% &$' &$( &$) &$# &$% %$' %$( %$) &$# &$%+ &$& &$&% &$% %$-+ %$- %$'+ %$' %$,+ %$, (% #% . #% . (% . &%% . &)% (% #% . #% . (% . &%% . &)% figure 3. temperature versus static drainCsource onCresistance figure 4. temperature versus gate threshold voltage /#+ /&% - ' , ( ) * + /&% ++ #+ &#+ /&% /#%%0 / /&$%0 2012-0 willas electronic corp. small signal mosfet 115 mamps,60 volts 2n7002dw1 t1 sot?363 scale 20:1 0.50 0.0197 1.9 0.0748 0.65 0.025 0.65 0.025 0.40 0.0157 mm inches soldering footprint* 2012-0 willas electronic corp. small signal mosfet 115 mamps,60 volts 2n7002dw1 t1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45) |
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